Hitachi FB-2100 FIB
The Hitachi FB-2100 Focused Ion Beam system is used for making micrometer- and nanometer-sized cuts in materials.
It can also be used to prepare TEM specimens of hard and soft materials and their combination, useful for engineers, physical scientists and life scientists, and for making TEM specimens containing different types of tissue, for example tissue growing on implants.
- 10 to 40 kV accelerating voltage
- 6 nm or better resolution at 40 kV
- Magnification range from 700x to 200,000x
- Maximum current of 40 nA at 40 kV
- Liquid gallium metal ion source
- 100 mm specimen diameter
- Actuated TEM holder stage
- Actuated SEM holder stage
- Actuated pick/place probe
- Tungsten deposition system
Samples can be cut using layouts created on the instrument's control computer, by importing a vector file via ftp, or by importing a bitmap image via ftp. A software and technical information on particle interactions with matter is available online.
Beam current values
The following tables show beam current at the sample as a function of acceleration voltage and aperture diameter. The first table is for the condensor lens off, the second table is for the condensor lens on.
Beam current in nA with Condensor lens off
5 μm | 15 μm | 30 μm | 80 μm | 150 μm | 300 μm | 520 μm | |
---|---|---|---|---|---|---|---|
10 kV | 0.00010 | 0.00027 | 0.00133 | ||||
15 kV | |||||||
20kV | 0.00305 | ||||||
25kV | |||||||
30kV | 0.00143 | 0.00674 | 0.03946 | ||||
35kV | |||||||
40kV | 0.00130 | 0.00335 | 0.01583 | 0.09280 |
Beam current in nA, Condensor lens on
5 μm | 15 μm | 30 μm | 80 μm | 150 μm | 300 μm | 520 μm | |
---|---|---|---|---|---|---|---|
10 kV | |||||||
15 kV | |||||||
20kV | 0.00588 | 0.26861 | |||||
25kV | |||||||
30kV | 0.00882 | 0.05195 | 0.44652 | 2.1265 | |||
35kV | |||||||
40kV | 0.00303 | 0.01064 | 0.06540 | 0.64103 | 3.0318 | 15.0243 | 43.892 |
- Specimen loading procedure
- Beam calibration procedure
- TEM sample preparation procedure
- TEM sample preparation procedure, with detailed description of each cut
- Important things to remember when using the FIB
- Transferring cutting pattern bitmap files to the FIB
- Transferring captured SIM images from the FIB
- A few notes on working distance
- Hitachi High-Technologies Technical Data (FIB) - A Micro-sampling technique and 3d-image observation of a broken wiring area of a semiconductor device
- A table of fabrication area versus magnification, useful for planning bitmap orientations and cutting parameters